Experiences in Applying Architecture-Centric Model
Oct 02

Abstract:
In this study, an avalanche extension to existing quasi-dynamic thermal model is developed. And the current and thermal distribution among paralleled
devices under avalanche condition is investigated. The statistic distribution of breakdown voltage, terminal stray inductance and thermal coupling all affect final electrical and thermal balance of paralleled devices. Without careful design consideration, it may cause reliability problem. So conclusions in this paper could provide useful guidelines for high power discrete or module
applications with paralleled power devices……………………..    MOSFETS.pdf

One Response to “Analysis of Avalanche Behaviour for Paralleled MOSFETs”

  1. admin Says:

    this is very good………

Leave a Reply

*
To prove you're a person (not a spam script), type the security word shown in the picture. Click on the picture to hear an audio file of the word.
Click to hear an audio file of the anti-spam word